POWERFUL HF AND MICROWAVE TRANSISTOR STRUCTURE Russian patent published in 2023 - IPC H01L29/70 

FIELD: semiconductor electronics.

SUBSTANCE: invention relates to semiconductor electronics. The powerful HF and microwave transistor structure according to the invention contains the collector, emitter and base regions, contact metallization and a ballast resistor connected by one edge to the contact metallization of the emitter, and by the other edge to the contact pad for connecting the emitter output, while the ballast resistor is multilayer, the materials of the layers have different resistivity and melting temperatures, increasing from the upper layer to the lower in relation to the semiconductor substrate, the thickness of the upper layer increases longitudinally from the emitter metallization.

EFFECT: invention provides an increase in the fault tolerance of the transistor structure in transient modes, which is achieved due to the presence of an upper layer of a multilayer ballast resistor with a longitudinal section shape different from the lower layers and a variable thickness, which leads to a decrease in the inertia of the process of increasing the resistance of sections of a multilayer ballast resistor in transient modes and, in general, the resistance of the ballast resistor r_br and the input resistance of the transistor structure R_in1, as the temperature of the active regions in contact with the resistor exceeds the melting temperature values of layers T₁, then T₂, etc. and, as a consequence, to an earlier start of the process of increasing the resistance of the ballast resistor and reducing the thermal power released by the active regions of the transistor structure.

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