FIELD: microelectronics. SUBSTANCE: film based on tantalum-aluminium alloy with content of tantalum up to 40-60 atomic per cent is deposited by cathode sputtering of tantalum and aluminium targets in atmosphere of oxygen. Partial pressure of oxygen is kept equal to (6.65-7.98) x 10-2 Pa and deposition of film is conducted with speed (3-4) 
. Then film is annealed in vacuum at 650-900 C. Specified technological modes provide for manufacture of film with specific resistance up to 5000 μk Ohm cm and thermal resistance coefficient not more than ∓ 5·10-5 deg -1. EFFECT: facilitated manufacture of thin-film resistors.
| Title | Year | Author | Number |
|---|---|---|---|
| METHOD OF PRODUCING MONOCRYSTALLINE THIN-FILM MULTICOMPONENT SEMICONDUCTOR | 2023 |
|
RU2818990C1 |
| PROCESS OF MANUFACTURE OF POWERFUL SHF TRANSISTOR STRUCTURES WITH STABILIZING EMITTER RESISTORS | 1991 |
|
RU2024994C1 |
| METHOD OF APPLYING COATING ON ALLOYS | 2001 |
|
RU2213802C2 |
| PROCESS OF PRODUCTION OF CLEAR CURRENT-CONDUCTING FILM BASED ON INDIUM AND TIN OXIDES | 1999 |
|
RU2181389C2 |
| METHOD FOR PULSED-LASER PRODUCTION OF HIGH DIELECTRIC CONSTANT THIN-FILM MATERIALS | 2004 |
|
RU2306631C2 |
| METHOD TO PRODUCE POSITIVE ELECTRODE OF LITHIUM-ION ACCUMULATOR AND LITHIUM-ION ACCUMULATOR | 2013 |
|
RU2526239C1 |
| PROCESS OF MANUFACTURE OF ELECTRICITY CONDUCTIVE TRANSPARENT FILMS | 1992 |
|
RU2034363C1 |
| PROCESS OF MANUFACTURE OF FILM RESISTORS | 1992 |
|
RU2046419C1 |
| METHOD FOR MANUFACTURING RESISTIVE FILMS BY MAGNETRON SPUTTERING | 2017 |
|
RU2658310C1 |
| LITHIUM-ALUMINIUM ANODE | 2015 |
|
RU2589742C1 |
