METHOD OF PRODUCING MONOCRYSTALLINE THIN-FILM MULTICOMPONENT SEMICONDUCTOR Russian patent published in 2024 - IPC H01L21/20 

FIELD: various technological processes.

SUBSTANCE: use to obtain thin multicomponent semiconductor films. Essence of the invention consists in the fact that a method of manufacturing a monocrystalline thin-film multicomponent semiconductor formed on a dielectric monocrystalline substrate, crystalline structure of which enables to obtain an epitaxial layer of a semiconductor, which includes applying a semiconductor material of a stoichiometric composition, creating temperature conditions which are optimal for the growth of the required crystalline structure, wherein on monocrystalline dielectric substrate all components of semiconductor material with thickness of one atomic layer are applied by laser deposition, after which the deposition process is stopped and time is given for 2 minutes for the semiconductor atoms to occupy places on the surface in accordance with the crystal lattice, then the process is repeated for the next atomic layer.

EFFECT: providing the possibility of manufacturing on a monocrystalline dielectric substrate a film of a multicomponent semiconductor having a monocrystalline structure in the entire volume, epitaxial structure of interface with substrate and controlled thickness of several atomic layers.

1 cl, 2 dwg