PROCESS OF MANUFACTURE OF ELECTRICITY CONDUCTIVE TRANSPARENT FILMS Russian patent published in 1995 - IPC

FIELD: optoelectronics. SUBSTANCE: indium oxide film doped with tin is sprayed by magnetron method from target composed of In₂O₃:SnO₂ where content of SnO₂ does not exceed 10 per cent by mass on to quartz substrate in argon-oxygen atmosphere having 10-15% oxygen. Pressure of mixture is 0.2-0.4 Pa, density of discharge power fed to target is 3.2-4.5 W/sq.cm at substrate temperature 300 C. Then annealing is performed at 500-550 C. Layer SiO₂ is applied on to film. EFFECT: expanded application field, facilitated manufacture. 2 cl