FIELD: radio engineering.
SUBSTANCE: invention relates to radio engineering and can be used in the manufacture of thin resistive films. Method of forming a resistive film is reactive magnetron sputtering. As the basis of the resistive film, it is proposed to use oxide of stainless steel elements.
EFFECT: use of oxide of stainless steel elements as a material for the resistive film providing greater reproducibility in comparison with analogues; as well as predicting the sheet resistance using a mathematical model of the process of the resistive film formation by the method of reactive magnetron sputtering.
1 cl, 2 dwg, 1 tbl
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