FIELD: measuring equipment. SUBSTANCE: sensor has silicon sublayer with through opening covered with a diaphragm from the working side of the sensor. The diaphragm is made of silicon dioxide. Film heater, dielectric layer, gas-sensitive semiconducting layer, and current-conducting contacts for the heater and gas-sensitive layer are arranged on the diaphragm in series. The opening is filled with oxidized porous silicone. The pore concentration of silicone decreases linearly with distance from the diaphragm interface over the depth of the opening from 6-20%. EFFECT: enhanced sensitivity. 1 dwg
