METHOD OF MANUFACTURE OF SEMICONDUCTOR GAS SENSOR Russian patent published in 1996 - IPC

FIELD: analytical engineering; manufacture of semiconductor gas sensors for analysis of composition of environment. SUBSTANCE: a metal film heater with a land system, separating porous dielectric layer and a gas-sensitive layer are successively deposited onto the dielectric substrate. Prior to deposition of the gas-sensitive layer, the dielectric layer is subjected to thermal treatment at a temperature of not below the sensor operating temperature. The porous dielectric is formed by anode treatment of deposited material. Metal phthalocyanines are used organic semiconductor. EFFECT: facilitated procedure. 4 cl, 1 tbl