PROCESS OF MANUFACTURE OF STRUCTURE "SILICON-SILICON DIOXIDE FILM" Russian patent published in 1995 - IPC

FIELD: microelectronics. SUBSTANCE: structures "silicon-silicon dioxide film" are machined with the aid of hydrostatic pressure 600-800MPa for the course of (7-9)(7-9)·10³ s. Pressure is raised periodically with rate of 5-10 MPa/s and is dropped to atmospheric one with decreasing rate determined by equation v = v_o-(n-1)Δv, where v_o=190-205 MPa/s - rate of pressure release after first cycle, Δv=1-3 MPa/s is change of release rate after each loading cycle, n=1,2,3... ordinal number of due loading cycle. EFFECT: improved continuity of structures, increased output of good articles. 3 dwg, 3 tbl