FIELD: manufacture of MOS and CMOS devices; sensor microelectronics for producing sensors of physical quantities. SUBSTANCE: manufacturing technique includes coating of silicon substrate with silicon dioxide film and cyclic low- temperature treatment of structures with liquid nitrogen in every 30- 60 s followed by exposure to room temperature; during treatment, film refraction index is measured and process is ceased as soon as it becomes steady state. Structures are exposed to room temperature by immersing them in organic solvent (ethanol). EFFECT: improved yield of structures due to reduced quantity of defective films. 1 tbl
