PROCESS OF FORMATION OF FILM ELEMENTS ON BASE OF PLATINUM Russian patent published in 1998 - IPC

FIELD: electronics, microelectronics. SUBSTANCE: process of formation of film elements on base of platinum includes deposition of metal-oxide adhesive layer and layer of platinum on substrate with oxygen-free dielectric coat, photolithographic making of configuration of elements. Adhesive layer is deposited by sputtering of titanium in oxygen-carrying plasma starting from pressure ratios /p=0.3-0.4 and finishing at , where is oxygen pressure; p is overall pressure of mixture. After deposition of layer of platinum vacuum annealing is performed to recovery of platinum dioxide to platinum and lower oxides. On formation of configuration of elements substrate is subjected to annealing in oxygen-carrying atmosphere. EFFECT: increased productivity and reliability of process.