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2 030 812

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IPC

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Application

5023182/25, 1991-12-17

(22)

Actual filing date

1991-12-17

(45)

Published

1995-03-10

(72)

Inventor

Evseev I.I.Zamotajlov Ju.G.Ivakin A.N.Petrov B.K.Surovtsev I.S.Korchagin Ju.A.Dudkin V.P.Bugrov V.P.

(73)

Holder

Evseev Igor' IvanovichIvakin Anatolij NikolaevichSurovtsev Igor' StepanovichDudkin Valerij Petrovich

SEMICONDUCTOR DEVICE Russian patent published in 1995 - IPC

Abstract RU 2030812 C1

FIELD: radio electronics. SUBSTANCE: device has two semiconductor layers of different polarity of conductivity, each provided with external resistive contact. Layers are of different thickness and two regions of opposing polarities of conductivity are formed in thin layer; region are distinguished by different concentration of media provided with resistive contacts; insulating layer is formed in gap between these regions that carries electrode. EFFECT: improved design. 1 dwg

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RU 2 030 812 C1

Authors

Evseev I.I.

Zamotajlov Ju.G.

Ivakin A.N.

Petrov B.K.

Surovtsev I.S.

Korchagin Ju.A.

Dudkin V.P.

Bugrov V.P.

Dates

1995-03-10—Published

1991-12-17—Filed

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