PROCESS OF MANUFACTURE OF SEMICONDUCTOR DETECTOR OF IONIZING PARTICLES Russian patent published in 1995 - IPC

FIELD: manufacture of semiconductor devices. SUBSTANCE: process consists in formation of layer of SiO₂ on surface of silicon plate of p type of conductance with creation of built-in positive charge on separation boundary with inverted n-layer induced in zone close to surface of p-silicon and in manufacture of pair of ohmic contacts on formed structure. One contact is made to inverse n-layer by means of n⁺ region with subsequent sputtering of metal on n⁺ region, the other contact is produced by sputtering of metal on p-region from rear side of plate. First n⁺ region is formed on surface of plate by ion implantation of dope and sputtering of metal contact electrode on n⁺ region is performed through mask, then layer SiO₂ is applied to zone limited by electrode. Application of layer is carried out at crystal temperature below 450 C. After this manufactured structure is subjected to X-ray radiation with D dose. Dose is selected from condition specified in description of invention. EFFECT: enhanced operational efficiency. 2 cl, 6 dwg