SEMICONDUCTOR DEVICE Russian patent published in 1997 - IPC

Abstract RU 2091908 C1

FIELD: digital and analog devices including failure resistant ones. SUBSTANCE: device semiconductor structure has two layers of same polarity of conductivity and thin layer of other polarity of conductivity placed between them. Intermediate layer thickness is smaller than length of carrier diffusion path; layer has low concentration of doping admixture. Vertical slot whose walls carry dielectric and gate layers separates two of three semiconductor regions of device. Each semiconductor region of device and gate have external resistive contacts. EFFECT: improved failure resistance of device. 7 dwg

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RU 2 091 908 C1

Authors

Liberman F.Ja.

Mikhajlov A.G.

Dobronravov O.E.

Dates

1997-09-27—Published

1994-07-15—Filed