METHOD OF SIMULTANEOUS PRODUCTION OF P-I-N STRUCTURE OF GAAS WITH P, I AND N AREA IN ONE EPITAXIAL LAYER Russian patent published in 2017 - IPC H01L21/208 

FIELD: microelectronics.

SUBSTANCE: invention relates to power microelectronic equipment, more specifically to methods of making semiconductor p-i-n structures of compounds A³B⁵ by liquid epitaxy methods. In method of simultaneous production of p-i-n structure GaAs. having p, i and n area in one epitaxial layer, during epitaxy when growing high-resistance of the i-area limited on both sides of low-alloyed p^-and n^-areas proposed to use elaborated mode of cooling letting without additional increase of growth of the gap between substrates to form required carrier concentration profile in the base area of structure.

EFFECT: technical result achieved at implementation of the developed method consists in reduction of direct voltage drop GaAs p-i-n structure with simultaneous reduction of back recovery time value.

1 cl, 1 tbl, 1 dwg