METHOD OF MAKING SEMICONDUCTOR DEVICE Russian patent published in 2016 - IPC H01L21/336 

FIELD: electricity.

SUBSTANCE: semiconductor device created by formation of gate dielectric layer of silicone oxynitride with thickness of 50-100 nm at temperature of 350 °C, SiH₄ flow rate of 1-3 cm³/s, pressure of 133 Pa, power of high-frequency discharge of 70 W, ratio of N₂O/(N₂O + NH₃) = 0.4 with subsequent annealing at 380-400 °C for 30 minutes in atmosphere of nitrogen.

EFFECT: reduced leakage current, providing processibility, improving parameters, high reliability and percentage yield of serviceable devices.

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