SILICON SUBSTRATE TREATMENT METHOD Russian patent published in 2001 - IPC

FIELD: semiconductor devices using single-crystalline silicon substrates for digital devices and integrated circuits. SUBSTANCE: method involves electrochemical formation of porous silicon layer, its irradiation with ions followed by removal of this layer; prior to ion irradiation substrates are elastically deformed by bending so as to make their effective side concave; next ion irradiation and removal of porous silicon are effected simultaneously by ion-plasma etching. EFFECT: improved design of substrates due to more effective gettering and reduced concentration of growth and process microflaws in them. 1 tbl