FIELD: microelectronics, in particular, manufacturing of digital equipment and integral circuits. SUBSTANCE: method involves preliminary restorable deformation of plates by means of bending so that working side of plate is concave, running triple-stage annealing of plates in deformed state in noble gas. First stage annealing runs at temperature of 1270-14-70 K, then temperature is decreased under rate of 1.4-16 K per minute and plates are kept at temperature of 1070-1120 K. Then temperature is again increased under rate of 1.4-16 K per minute and plates are kept at temperature of 1270-1470 K. EFFECT: increased functional capabilities. 1 tbl
