METHOD OF MANUFACTURE OF SEMICONDUCTOR CRYSTAL Russian patent published in 1994 - IPC

FIELD: semiconductor equipment. SUBSTANCE: this method of manufacture of semiconductor crystal uses electrodes interclosed in advance over face side of substrate with exit to opposite side through metal bottom of through holes as common electric contact in process of electrochemical precipitation of thick gold into through holes and on metal pads on back side of substrate. EFFECT: improved process concerned with prevention of loss of gold, facilitated manufacture and versatility of method, raised quality of crystals after separation of substrate, improved reliability of metallization in through holes. 2 dwg