THIN FILM OF LOW-TEMPERATURE POLYCRYSTALLINE SILICON, METHOD OF MANUFACTURE OF SUCH THIN FILM AND TRANSISTOR MADE OF SUCH THIN FILM Russian patent published in 2018 - IPC H01L29/786 H01L21/336 H01L21/324 

FIELD: technological processes.

SUBSTANCE: invention provides a method of manufacturing a thin film of low-temperature polycrystalline silicon, comprising the step of growing an amorphous silicon layer, a step of initial growing a silicon oxide layer on the amorphous silicon layer. Then the formation of some set of concave surfaces on silicon oxide layer, which will reflect rays of light vertically projected onto silicon oxide, and last, step of projecting beam of excimer laser on amorphous silicon layer through silicon oxide layer, to convert an amorphous silicon layer into thin film of low-temperature polycrystalline silicon. The present invention also provides a thin film of low-temperature polycrystalline silicon made by the method described above, as well as a low-temperature polycrystalline silicon transistor.

EFFECT: when annealing process is executed using an excimer laser for manufacturing thin film of low-temperature polycrystalline silicon, the starting point and direction of recrystallization can be controlled to obtain increased grain size.

20 cl, 3 dwg