LOW TEMPERATURE POLYCRYSTALLINE SILICON THIN FILM PRE-CLEANING METHOD AND PREPARATION METHOD, LIQUID CRYSTAL DISPLAY DEVICE AND SYSTEM FOR MAKING SAME Russian patent published in 2018 - IPC H01L21/268 

FIELD: image forming devices.

SUBSTANCE: present invention relates to the technical field of liquid crystal display, particularly to a method for preparing low temperature polycrystalline silicone thin film, comprising: growing a buffer layer and then an amorphous silicon layer on a substrate; heating the amorphous silicon layer above room temperature, and precleaning the amorphous silicon layer; using excimer laser (ELA) beams to irradiate the amorphous silicon layer pre-cleaned at the previous step, so as to transform the amorphous silicon into polycrystalline silicon. Present invention also provides a system for manufacturing a thin film of low-temperature polysilicon.

EFFECT: by improving the system for manufacturing a thin film of low-temperature polysilicon and a pre-cleaning method the present invention reduces the non-uniformity of the thickness of the amorphous silicon layer and the unevenness of the polysilicon layer obtained in the subsequent stage of irradiation with an excimer laser.

6 cl, 3 dwg