FIELD: metal-oxide- semiconductor storage devices; random-access memory devices. SUBSTANCE: double-layer silicide is produced by evaporating silicide-forming metal at predetermined first temperature on polycrystalline silicon to form first metal silicide layer followed by evaporating silicide-forming metal at second temperature which is lower than first temperature to form second metal silicide layer; instability of known semiconductor device built around titanium silicide shows up at higher temperature when baking it in oven. EFFECT: provision for avoiding growth of beads, plastic strain, and agglomeration due to high-temperature stability of titanium silicide. 18 cl, 4 dwg
