VAPOR PHASE CRYSTAL GROWING METHOD Russian patent published in 1995 - IPC

Abstract RU 2041298 C1

FIELD: optic material manufacture process. SUBSTANCE: method involves heating basic material, conducting vacuum evaporation of basic material at 1200-1300 C with the rate of precipitation of basic crystalline substance of 0.6-2.4 mm/h on substrate heated to 1100-1180 C. Substrate is made from amorphous material, particularly, from carbonic fibre fabric. Monocrystals of magnesium fluoride obtained by such method are oriented in plane. EFFECT: increased strength and radiation resistance. 3 cl, 2 dwg, 1 tbl

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RU 2 041 298 C1

Authors

Garibin E.A.

Gusev I.B.

Ivanova O.A.

Mironov I.A.

Smirnov A.N.

Dates

1995-08-09—Published

1993-08-17—Filed