METHOD FOR FORMING DIELECTRIC LAYER ON SURFACE OF InAs CRYSTAL Russian patent published in 2019 - IPC H01L21/316 

FIELD: electrical engineering.

SUBSTANCE: invention relates to the manufacturing technology of semiconductor devices containing a dielectric – semiconductor passive structure, including diodes and transistors, as well as radiation receivers sensitive in the spectral range (1÷3.5) mcm, such as photodiodes and phototransistors on n-type conduction InAs crystals. In the method of forming a dielectric layer by the method of anodic oxidation in galvanostatic mode at a current density of 0.5 mA/cm² in an electrolyte based on a mixture of ethylene glycol and concentrated ammonia in a ratio of 5:1 with the addition of fluorine-containing components – salts NH₄F, providing the concentration of NH₄F in the electrolyte 12 g/l, the thickness of the layer of 350÷500 Ǻ is provided.

EFFECT: invention provides for the elimination of surface leakage currents and tunnel-type explosive noise, as well as an increase in the breakdown voltage of planar p⁺-n transitions on InAs crystals.

1 cl, 1 dwg