METHOD FOR MAKING SILICON-ON-INSULATOR STRUCTURE Russian patent published in 2013 - IPC H01L21/762 

FIELD: electricity.

SUBSTANCE: to amorphous insulating layer SiO₂ of Si substrate ions of light segregating impurity are implanted which are capable to form nanocrystals within volume of the layer SiO₂-Si⁺ or Ge⁺. Localisation area of the implanted impurity is obtained. Implantation modes ensure concentration of the implanted additive sufficient to form nanocrystals not less than 10 at.% and not more than 20 at.% at which the distance between introduced foreign atoms is less than their diffusion length at annealing and location of localisation area for the implanted impurity at distance of the semiconductor surface layer is not less than diffusion length of the implanted impurity at annealing. Donor substrate made of Si is connected with SiO₂ layer of the substrate and coupling procedure is performed with formation of surface Si layer of the required thickness at SiO₂ thus making silicone-on-insulator structure. Finally annealing is made providing diffusion of the introduced impurity, coalescence and formation of nanocrystals in amorphous insulating layer.

EFFECT: due to formation of nanocrystals being traps for negative charges unfavourable influence of the built-in positive charge in dielectric compensated thus ensuring improvement in structure quality, removing sequences of ionising radiation expanding application scope.

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