FIELD: semiconductor engineering. SUBSTANCE: damage eliminating method used in developing up-to-date materials for microelectronics including silicon-on-insulator structures involves implantation of ions followed by inert-gas annealing at high hydrostatic pressure of 0.6-1.5 GPa and temperature of 1100-1200 C for 2 to 10 h. Proposed method provides for eliminating structural damage at Si/SiO2 interface by annealing at temperatures much lower than those commonly used for the process. EFFECT: reduced annealing temperatures in production of silicon-on-insulator structures. 1 dwg
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