METHOD FOR MANUFACTURING SILICON-ON-INSULATOR STRUCTURE Russian patent published in 2001 - IPC

FIELD: semiconductor engineering; very large-scale integrated circuits and other items of microelectronics. SUBSTANCE: method involves implantation of hydrogen in doses ranging between 2,5·10¹⁶ and 5·10¹⁶cm^-2 in first silicon plate through oxide layer, 20-50 nm thick, followed by its removal upon irradiation; oxidation of second plate before preparing plates for connection; chemical treatment of irradiated and second silicon plates and their interconnection followed by heat treatment for splicing the plates and separating irradiated plate into layers at 150-250 C for 1-2 h and at 350-450 C for 0.5-2 h; high-temperature treatment at 1100 C for 0.5-1 h to improve some properties of structure such as property of Si/SiO₂ interface; removal of damaged near-surface silicon layer. EFFECT: reduced requirement of irradiation and temperature effect for structure manufacture which reduces cost of structure. 3 cl, 2 dwg