FIELD: semiconductor technology. SUBSTANCE: surface of semiconductor is subjected to irradiation by ions Ar+ or Kr+ with energy 1-4 keV and fluency 1015....1016ion·cm2 . After irradiation semiconductor is heated to 1100 K with simultaneous registration of thermal flow of molecules of hydrogen from surface of sample. EFFECT: improved reliability of determination.
| Title | Year | Author | Number |
|---|---|---|---|
| METHOD OF ANALYSIS OF SOLIDS | 1997 |
|
RU2124716C1 |
| METHOD OF PRODUCING SEMI-INSULATING GALLIUM ARSENIDE | 1992 |
|
RU2046164C1 |
| METHOD OF PRODUCING MONO-CRYSTALLINE PLATES OF ARSENIDE-INDIUM | 2006 |
|
RU2344211C2 |
| PROCESS OF MANUFACTURE OF BIPOLAR TRANSISTORS | 0 |
|
SU1800501A1 |
| METHOD FOR MANUFACTURING ANTI-REFLECTION OPTICAL COATING BASED ON POROUS GERMANIUM | 2023 |
|
RU2805380C1 |
| PRODUCTION METHOD OF TIN-DOPED INDIUM PHOSPHIDE MONOCRYSTALS | 2006 |
|
RU2344510C2 |
| METHOD OF PRODUCING POROUS SILICON | 2014 |
|
RU2547515C1 |
| ANTIREFLECTION OPTICAL COATING BASED ON POROUS GERMANIUM | 2023 |
|
RU2817009C1 |
| METHOD OF MAKING DIFFRACTION GRATING | 2013 |
|
RU2544873C1 |
| METHOD OF PROCESSING MONOCRYSTALLINE EPITAXIAL LAYERS OF GROUP III NITRIDES | 2006 |
|
RU2354000C2 |
