FIELD: microelectronics. SUBSTANCE: resistive film is applied on dielectric substrate. Then cyclic low-temperature treatment is performed in liquid nitrogen for 25-30 min. This treatment alternates with exposure to air for 30-60 s. Method also includes annealing. Duration of keeping the substrate with film in liquid nitrogen is increased in every subsequent treatment cycle in compliance with mathematical expression. EFFECT: more efficient manufacturing process. 1 tbl
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