FIELD: radio engineering, electronics. SUBSTANCE: invention refers to technology of growth of crystals from melt under action of ultrasound. Device consists of graphite container-support with conical hole in base where metal waveguide is installed. Quartz melting pot in positioned in container-support. Metal gallium for enhancement of acoustic space is placed between waveguide and melting pot. EFFECT: enhanced manufacturing efficiency and productivity. 1 dwg
| Title | Year | Author | Number |
|---|---|---|---|
| METHOD FOR GROWING SINGLE CRYSTALS | 1991 |
|
RU2035530C1 |
| METHOD OF PRODUCING SINGLE CRYSTALS OF GALLIUM ARSENIDE | 0 |
|
SU1810400A1 |
| SILICON MONOCRYSTAL GROWING APPARATUS, SCREENING DEVICE AND CRYSTAL GROWING PROCESS BY CHOKHRALSKY METHOD | 2002 |
|
RU2231582C1 |
| DEVICE FOR THE SYNTHESIS OF POLYCRYSTALLINE SEMICONDUCTOR AND METAL MATERIALS | 2023 |
|
RU2824029C1 |
| APPARATUS FOR GROWING SINGLE CRYSTALS OF GALLIUM ARSENIDE BY THE CZOCHRALSKI METHOD | 2021 |
|
RU2785892C1 |
| DEVICE FOR GROWING OF SINGLE CRYSTALS OF SILICON BY CZOCHRALSKI METHOD | 2008 |
|
RU2382121C1 |
| DEVICE FOR SILICON SINGLE CRYSTALS GROWING BY CHOKHRALSKY METHOD | 2007 |
|
RU2355834C1 |
| PROCEDURE FOR PRODUCTION OF MONO-CRYSTAL | 2009 |
|
RU2418108C1 |
| DEVICE FOR CRYSTAL GROWTH BY VERTICAL BRIDGMAN METHOD | 2019 |
|
RU2698830C1 |
| INSTALLATION FOR PRODUCTION OF MONO-CRYSTALS | 2009 |
|
RU2418109C1 |
