SILICON MONOCRYSTAL GROWING APPARATUS, SCREENING DEVICE AND CRYSTAL GROWING PROCESS BY CHOKHRALSKY METHOD Russian patent published in 2004 - IPC

FIELD: production of semiconductor monocrystals, in particular, growing of silicon monocrystals from melt.

SUBSTANCE: apparatus has monocrystal growing chamber, crucible placed in said chamber and adapted for producing of melt and extracting silicon monocrystal from melt, and screening device arranged in axially aligned relationship with respect to monocrystal under growing process and made in the form of double screen comprising inner and outer screens. Outer screen has shape conforming or approximating that of quartz crucible. Spacing between quartz crucible inner surface and outer screen is 10-30 mm. Double screen is positioned in such a manner that spacing between its lower end and melt surface is 8-40 mm. Screening device allows inert gas flow speed to be increased in the vicinity of melt surface at crystal growing zone, with the result that crystal growing process goes on at increased speed.

EFFECT: increased efficiency owing to increased speed of monocrystal growing process and provision for production of monocrystals with perfect structure.

5 cl, 1 dwg