PLANAR MAGNETIC-TRANSISTOR CONVERTER Russian patent published in 2011 - IPC H01L29/82 H01L27/22 

FIELD: electricity.

SUBSTANCE: planar magnetic-transistor converter comprises a silicic single-crystal substrate, a diffusion pocket, a base area in the pocket, areas of emitter, the first and second measurement collectors in the base, the area of contacts to the base, to the diffusion pocket, to substrate, differs with geometry of emitter and collector areas. The distance between areas of emitter and collectors is selected as an alternating value, the collectors width increases as the distance from the emitter to the collector increases, collectors are arranged in a pairwise manner at each side of the emitter and have various angles of inclination between sides of the emitter and collectors, the left and right collectors relative to the emitter are connected by means of metallisation, and there are two common collector outputs.

EFFECT: planar magnetic transistor converter included into integral magnetic sensors increases sensitivity to the magnetic field directed perpendicularly to the crystal surface and eliminates sensitivity to a magnetic field that acts in parallel to the crystal surface.

2 cl, 8 dwg