FIELD: technology of production of bipolar transistors. SUBSTANCE: the base region created by standard processes of photolithography and diffusion through the mask of a definite pattern, which represents a system of protective islands with a width of not more than 1.28 of the depth of occurrence of the collector p-n junction. The emitter region is created by diffusion to the region located around the protective island. EFFECT: facilitated procedure. 16 dwg
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