GUN-EFFECT HIGH-FREQUENCY DEVICE Russian patent published in 1997 - IPC

FIELD: electronic devices. SUBSTANCE: device has n-type semiconductor material GaAs, anode and cathode contacts which are located in opposite. Capacitor contact has n+-type regions which inject current. Said regions are embraced with regions which limit current injection and are designed as reverse-bias Schottky barrier. Semiconductor layers of n+ and n++ conductivity are generated on side of anode contact. Injection and injection-clipping regions are designed as rings with common geometric center. Cylindrical hole is made in center of device structure. Projection of hole coincides with inner circle of inner ring. Generatrix of cylinder is perpendicular to all layers. Novel feature of device is design of cathode as current-injecting ring regions which are repeated with period of δ = (h^re + h^Sb)N and spaced by (N+1) regions which limit current-injection in device. All rings have common geometric center. Number of ring regions which inject current in device for given input power P_in and overheating ΔT conform to given condition. In addition overheating conforms to condition ΔT ≅ 100 K. External radius of geometric center of ring cathode region which injects current R1 and δ conforms to conditions K₁≥ 25 h^re,δ > 10 h^re, where h^re is depth of ring envelope which injects current in device. EFFECT: increased functional capabilities. 3 cl, 2 dwg