GUNN-EFFECT SEMICONDUCTOR DEVICE Russian patent published in 1996 - IPC

FIELD: electronic engineering. SUBSTANCE: high-frequency Gunn-effect device has n-type semiconductor material with n-type semiconductor layers formed on it on anode contact side and n⁺⁺-type layers on cathode contact side located opposite to anode contact that has regions injecting current and annular regions limiting current injection in device; injecting region is surrounded by annular regions limiting current injection in device; inner diameter of annular region functions as projection of cylindrical hole passed through high-frequency device perpendicular to its base. EFFECT: improved design. 9 cl, 4 dwg