HIGH-FREQUENCY GUNN-EFFECT DEVICE Russian patent published in 1997 - IPC

FIELD: radio equipment for generating microwaves. SUBSTANCE: current-injecting cathode region of device uses Gunn effect and is made in the form of local heteroinjectors built of material whose forbidden gap is smaller than that of material n-GaAs,AL_xGa_1-xAs with constant value of x parameter contacting on one side n-GaAs material and forming with the latter abrupt heterojunction; on other side, it contacts Al_xGa_1-xAs layer with parameter x descending to zero towards n⁺⁺-GaAs layer on cathode contact side; layer whose parameter xAl_xGa_1-xAs linearly varies and which is placed between material Al_xGa_1-xAs having constant x parameter of same value as that of the former on contacting barrier and n⁺⁺-GaAs layer. Heteroinjector is surrounded with region limiting current injection which is made in the form of Schottky barrier. Parameter x is found from condition 0<x≅0,23 and energy ε accumulated by carriers on heteroinjector length meets condition ε ≅ Δ_γL, where Δ_γL is energy gap between GaAs valleys γ and L. Carrier concentration in n⁺-layer satisfies condition n<n⁺<n⁺⁺, where n⁺⁺ and n concentrations are chosen from conditions 8·10¹⁷≅n≅5·10¹⁸,cm^-3, 3·10¹⁵≅n≅1,4·10¹⁶,cm^-3. Local heteroinjectors are made in the form of cylindrical regions directed inside semiconductor material; cylinder bases are located in device cathode contact plane and their generating line is perpendicular to cathode contact plane. EFFECT: improved design. 4 cl, 10 dwg