SEMICONDUCTOR IONIZING-RADIATION DETECTOR Russian patent published in 1996 - IPC

Abstract RU 2061282 C1

FIELD: microelectronics. SUBSTANCE: semicondictor detector has semiconductor substrate of first type of conductivity formed in which are two regions of second type of conductivity and region of first type of conductivity with high concentration of dope formed as solid layer on underside of substrate. Electrodes are formed on surfaces of regions of second type of conductivity and first type of conductivity on underside of substrate. EFFECT: improved sensitivity to ionizing radiation. 2 dwg

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RU 2 061 282 C1

Authors

Kashigin S.V.

Dates

1996-05-27—Published

1993-11-30—Filed