FIELD: electronic devices.
SUBSTANCE: proposed GaAs ionizing radiation detector has substrate that carries contacts, substrate boundary semi-insulating GsAs layer, and barrier contact. Detector also incorporates Ga1-xAlxAs insulating layer having common boundary with semi-insulating GaAs layer, non-doped GaAs layer having common boundary with Ga1-xAlxAs insulating layer, p region in non-doped GaAs and insulating GaAlAs layers up to semi-insulating GaAs layer, and high-resistance region around barrier contact periphery.
EFFECT: enhanced threshold sensitivity and resolving power of detector enabling detection of weak ionizing flows.
1 cl, 1 dwg
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