SOLID-STATE IONIZING RADIATION DETECTOR Russian patent published in 2007 - IPC H01L31/115 G01T1/24 

FIELD: ionizing radiation detectors.

SUBSTANCE: proposed ionizing radiation detector has GaAs substrate with contacts, its boundary semi-insulated layer, and ohmic contact. In addition it has Ga_{1 - x}Al_xAs insulating layer having common boundary with semi-insulating GaAs layer, non-doped GsAs layer having common boundary with Ga_{1 - x}Al_xAs insulating layer, GsAs doping layer of n polarity of conductivity having common boundary with non-doped GaAs layer that carries additional ohmic and barrier contacts. All these layers and above-mentioned ohmic contact form field-effect transistor incorporating p region formed in doped and non-doped GaAs layers and in GaAlAd insulating layer, as well as high-resistance region disposed on periphery of mentioned transistor.

EFFECT: enhanced threshold sensitivity and resolving power, reduced noise level, ability of detecting weak ionizing streams.

1 cl, 1 dwg