GALLIUM ARSENIDE ETCHANT Russian patent published in 1996 - IPC

Abstract RU 2063095 C1

FIELD: microelectronics. SUBSTANCE: gallium arsenide etchant contains in its composition nitric acid (712-1000 g/1), sodium or potassium nitrite (1-20 g/1), and water. EFFECT: provision for producing dull finish of GaAs surface to enlarge external quantum radiation efficiency of light-emitting diodes and adhesion of metal contact layers.

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RU 2 063 095 C1

Authors

Vozmilova L.N.

Maljarova V.G.

Dates

1996-06-27Published

1993-05-07Filed