FIELD: microelectronics. SUBSTANCE: gallium arsenide etchant contains in its composition nitric acid (712-1000 g/1), sodium or potassium nitrite (1-20 g/1), and water. EFFECT: provision for producing dull finish of GaAs surface to enlarge external quantum radiation efficiency of light-emitting diodes and adhesion of metal contact layers.
Title | Year | Author | Number |
---|---|---|---|
0 |
|
SU1783594A1 | |
PROCESS OF MANUFACTURE OF SEMICONDUCTOR DEVICE | 1992 |
|
RU2031483C1 |
METHOD TO MANUFACTURE FIELD TRANSISTORS WITH SELF-ALIGNED GATE OF SUBMICRON LENGTH | 2010 |
|
RU2436186C2 |
LIGHT EMITTING DIODE | 1992 |
|
RU2054210C1 |
METHOD FOR PREPARING EVEN-ATOM SURFACE OF GALLIUM ARSENIDE | 2006 |
|
RU2319798C1 |
METHOD OF GROWING GALLIUM NITRIDE FILM | 2014 |
|
RU2578870C2 |
METHOD OF MANUFACTURING DIODE WITH TERAHERTZ RANGE WHISKER | 2016 |
|
RU2635853C2 |
METHOD TO PRESERVE SURFACE OF SUBSTRATES FROM GALLIUM ARSENIDE | 2012 |
|
RU2494493C1 |
METHOD OF MANUFACTURE OF FIELD-EFFECT TRANSISTORS ON THE BASE OF GALLIUM ARSENIDE | 0 |
|
SU1831731A3 |
METHOD FOR STABILIZATION OF PARAMETERS OF LIGHT-EMITTING DIODES | 1981 |
|
RU2034277C1 |
Authors
Dates
1996-06-27—Published
1993-05-07—Filed