METHOD FOR PREPARING EVEN-ATOM SURFACE OF GALLIUM ARSENIDE Russian patent published in 2008 - IPC C30B33/10 C30B33/02 C30B29/42 H01L21/302 

FIELD: microelectronics, namely processes for preparing even-atom surfaces of semiconductors.

SUBSTANCE: method comprises steps of chemical-dynamic polishing of substrate surface in polishing etching agent containing sulfuric acid, hydrogen peroxide and water for 8 - 10 min; removing layer of natural oxide in aqueous solution of hydrochloric acid until achieving hydrophobic properties of purified surface of substrate; washing it in deionized water and drying in centrifuge. Then substrate is treated in vapor of selenium in chamber of quasi-closed volume while forming gallium selenide layer at temperature of substrate Ts = (310 -350)°C, temperature of chamber walls Tc = (230 - 250)°C, temperature of selenium Tsel = (280 - 300)°C for 3 - 10 min. After such procedure substrate is again placed in aqueous solution of hydrochloric acid in order to etch layer of gallium selenide. Invention allows produce even-atom surface of gallium arsenide at non-uniformity degree such as 3Å.

EFFECT: possibility for using substrates for constructing nano-objects with the aid of self-organization effects.

4 dwg