METHOD OF SELECTIVE REACTIVE-ION ETCHING FOR SEMICONDUCTOR HETEROSTRUCTURE Russian patent published in 2016 - IPC H01L21/3065 

FIELD: electricity.

SUBSTANCE: method of selective reactive-ion etching for a semiconductor heterostructure having at least a sequence of layers GaAs/AlGaAs with preset characteristics includes the placement of the semiconductor heterostructure at a substrate holder in the reactor of a reactive-ion etching system with provided contact for the layer of gallium arsenide with process gas plasma, delivery of process gasses to the reactor and further selective reactive-ion etching at preset process parameters. In the method the semiconductor heterostructure is used with a layer of AlGaAs having the thickness of at least 10 nm, with the content of chemical elements Al_xGa_1-xAs at x equal or more than 0.22, the process gasses are represented by a mixture of boron trichloride and sulphur hexafluoride at a ratio of (2:1)-(9:1) respectively, selective reactive-ion etching is carried out at a pressure in the reactor equal to 2-7 Pa, power supplied to discharge of 15-50 W, temperature of the substrate holder of 21-23°C, total consumption rate of the process gases of 15-25 ml/min.

EFFECT: improved output of fit articles by increasing selectivity, controllability, reproducibility, anisotropy and reduced unevenness, density of defects and impurities at the surface of the semiconductor heterostructure.

2 cl, 9 dwg