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2 582 440

(13)

(51)

IPC

H01L29/737(2006-01-01)

B82B1/00(2006-01-01)

(21) (22)

Application

2015104011/28, 2015-02-06

(24)

Start date

2015-02-06

(22)

Actual filing date

2015-02-06

(45)

Published

2016-04-27

(72)

Inventor

Galiev Galib BarievichKhabibullin Rustam AnvarovichPushkarev Sergej SergeevichPonomarev Dmitrij SergeevichKlimov Evgenij AleksandrovichKlochkov Aleksej Nikolaevich

(73)

Holder

Federalnoe Gosudarstvennoe Bjudzhetnoe Uchrezhdenie Nauki Institut Sverkhvysokochastotnoj Poluprovodnikovoj Elektroniki Rossijskoj Akademii Nauk Ran)

SEMICONDUCTOR TRANSISTOR NANO-HETEROSTRUCTURE ON SUBSTRATE OF GaAs WITH MODIFIED STOP LAYER OF AlGaAs Russian patent published in 2016 - IPC H01L29/737 B82B1/00

Abstract RU 2582440 C1

FIELD: electronic equipment.

SUBSTANCE: invention relates to electronic engineering and can be applied for making monolithic integrated circuits operating in centimetre and millimetre wavelength ranges. According to invention, semiconductor transistor heterostructure is proposed on GaAs substrate with modified Al_xGa_1-xAs stop-layer. Modified Al_xGa_1-xAs stop-layer is grown with gradient of aluminium molar ratio from x = 0.23 to x₀= 0.26÷0.30 and with thickness of 1÷10 nm.

EFFECT: invention provides accurate control of etching depth by means of stop-layer introduction, which must not have any negative effect on parameters of field-effect transistor; negative effect can be manifested as reduction of breakdown voltage and operating currents, bad transistor control, high resistance of ohmic contacts.

1 cl, 2 dwg

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RU 2 582 440 C1

Authors

Galiev Galib Barievich

Khabibullin Rustam Anvarovich

Pushkarev Sergej Sergeevich

Ponomarev Dmitrij Sergeevich

Klimov Evgenij Aleksandrovich

Klochkov Aleksej Nikolaevich

Dates

2016-04-27—Published

2015-02-06—Filed