ELECTRON-CYCLOTRON RESONANCE OF DISCHARGE PLASMA SOURCE Russian patent published in 1996 - IPC

Abstract RU 2070357 C1

FIELD: treatment of large-area substrates by electron-cyclotron resonance of plasma beam to deposit thin films, modify the surface, and clean or etch it. SUBSTANCE: electron-cyclotron resonance of discharge plasma source is, essentially, microwave antenna built up of rods arranged along vacuum chamber wall in parallel to each other and connected on one end through sealed microwave lead-ins to microwave-energy supply and closed to vacuum chamber body on other end. Permanent magnets are installed beyond vacuum chamber against each rod. Plasma source may have cylindrical or planar configuration. When it is planar, flat substrate is placed in vacuum chamber in parallel to microwave antennas. Cylindrical-configuration source is meant to treat cylindrical substances placed in vacuum chamber coaxially in respect to source. Source provides for treating substrates of working surface area as large as 100 sq.cm and larger by plasma beam. Nonuniformity of substrate surface treatment is not over +-5%. EFFECT: enlarged functional capabilities. 2 dwg

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RU 2 070 357 C1

Authors

Vanin A.A.

Zotov S.V.

Kremerov M.A.

Malinov A.Ju.

Dates

1996-12-10Published

1993-12-28Filed