INFRA-RED RADIATION SENSOR Russian patent published in 1997 - IPC

Abstract RU 2083030 C1

FIELD: radiation detectors with selective sensitivity in infra-red region for development photosensitive devices. SUBSTANCE: sensor has p-type single-crystalline silicon substrate of higher than 20 Ohm-cm resistivity and n-type amorphous silicon layer of 1.6-2.0 mcm thickness formed on it, as well as resistive contacts for them. EFFECT: improved sensitivity. 2 dwg

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RU 2 083 030 C1

Authors

Budagjan B.G.

Ajvazov A.A.

Sherchenkov A.A.

Filatova I.V.

Dates

1997-06-27—Published

1995-06-28—Filed