METHOD FOR MANUFACTURING OF SILICON-ON-INSULATOR STRUCTURE Russian patent published in 2009 - IPC H01L21/324 

FIELD: physics, conductors.

SUBSTANCE: invention is related to semiconductor technology and may be used to manufacture device structures. In method for production of silicon-on-insulator structure, insulating layer is generated on substrate surface, and ions of weakly soluble and easily segregating admixture of reactive gases are implanted in it. Conditions of implantation provide for concentration of introduced admixture, which exceeds solubility limit and which, in process of annealing, results in generation of endotaxial layer of dielectric, but insufficient for ion synthesis of precipitates. In donor substrate ion implantation is used to create weakened zone, which extracts layer transferred to insulating layer of substrate. Then chemical treatment of substrate and donor substrate is carried out, and they are connected by insulating layer and layer transferred to substrate, intertwined and stratified in weakened zone with generation of cut-off surface layer on substrate. Further high-temperature treatment is used to segregate implanted admixture to its border of interface with cut-off surface layer, and intermediate insulating layer is grown on specified border.

EFFECT: higher quality of structures and expansion of method application sphere.

7 cl, 4 dwg, 8 ex