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2 547 515

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IPC

C30B31/22(2006-01-01)

C30B29/06(2006-01-01)

C01B33/02(2006-01-01)

B82B3/00(2006-01-01)

B82Y30/00(2011-01-01)

B82Y40/00(2011-01-01)

(21) (22)

Application

2014114101/05, 2014-04-09

(24)

Start date

2014-04-09

(22)

Actual filing date

2014-04-09

(45)

Published

2015-04-10

(72)

Inventor

Stepanov Andrej L'VovichNuzhdin Vladimir IvanovichValeev Valerij FerdinandovichOsin Jurij Nikolaevich

(73)

Holder

Federal'Noe Gosudarstvennoe Bjudzhetnoe Uchrezhdenie Nauki Kazanskij Fiziko-Tekhnicheskij Institut Im. E.K. Zavojskogo Kazanskogo Nauchnogo Tsentra Rossijskoj Akademii Nauk Kaznts Ran)

METHOD OF PRODUCING POROUS SILICON Russian patent published in 2015 - IPC C30B31/22 C30B29/06 C01B33/02 B82B3/00 B82Y30/00 B82Y40/00

Abstract RU 2547515 C1

FIELD: physics.

SUBSTANCE: method includes forming on the surface of an initial monocrystalline silicon substrate a layer of porous silicon via ion implantation of silver or cobalt ions with energy of 10-50 keV, a radiation dose which provides concentration of embedded metal atoms in the irradiated substrate of 3·10²⁰-6·10²³ atoms/cm³, current density of the ion beam of 2·10¹²-1·10¹⁴ ions/cm² s with substrate temperature during irradiation of 20-400°C.

EFFECT: obtaining layers of porous silicon directly on the surface of monocrystalline silicon by ion implantation while excluding high-temperature annealing of the obtained articles from the process.

9 dwg, 3 ex

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RU 2 547 515 C1

Authors

Stepanov Andrej L'Vovich

Nuzhdin Vladimir Ivanovich

Valeev Valerij Ferdinandovich

Osin Jurij Nikolaevich

Dates

2015-04-10—Published

2014-04-09—Filed