METHOD OF PREPARATION OF SEMICONDUCTOR SUBSTRATES Russian patent published in 1997 - IPC

FIELD: manufacture of substrates for fabrication of integrated circuits and discrete semiconductors. SUBSTANCE: the method of preparation of semiconductor substrates consists in mechanical polishing and cleaning of surface with the use of ultrasound, chemical smoothing and polishing of the substrate working side. After mechanical polishing and cleaning a microrelief is formed on the substrate working side by selective or anisotropic electrochemical etching to the depth of the layer disrupted by polishing, and the substrate is treated by ultrasound for 2.5 to 3 hours in deionized water, then, not later than in 24 hours, chemical smoothing and mechanical polishing are performed for removal of the microrelief on the substrate working side. EFFECT: facilitated procedure. 2 tbl