FIELD: semiconductor engineering. SUBSTANCE: method intended for removing background impurities and extended structural flaws during manufacture of semiconductor wafers and structures for integrated circuits and digital semiconductor devices includes manufacture of wafers and their ultrasonic treatment in neutral liquid for 2.5 3.0 h at the same time applying dc voltage V whose value is found from formula given in description of invention. EFFECT: enhanced uniformity of distribution of wafer electrophysical characteristics due to reduced concentration of structural flaws. 1 cl, 3 tbl
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