FIELD: manufacture of semiconductor devices resistant to destabilizing factors. SUBSTANCE: method involves joining oxidized effective silicon plate and carrier plate by thermal compression and thinning effective plate to desired thickness of device layer by abrasive-chemical treatment. Prior to thermal compression, internal getter is formed in effective plate by cyclic annealing in inert environment, and surface layer of plate is gettered to remove impurities and flaws through depth equal to at least thickness of device layer. EFFECT: improved quality of device layers of structure due to reduced number of flaws. 1 tbl
