METHOD OF PRODUCING MONOSILANE Russian patent published in 2010 - IPC C01B33/04 

Abstract RU 2390494 C1

FIELD: chemistry.

SUBSTANCE: invention can be used to produce monosilane which is suitable for making thin-film semiconductor objects and producing highly pure poly- and monocrystalline silicon. Silicon tetrafluoride is reacted with calcium halogen hydride of general formula CaHX, where X=Cl, Br or J, in a medium of C12-C30-polyphenyl esters or their mixture with diphenyl at 100-250 °C.

EFFECT: invention increases selectivity of the process, increases purity of the end product and output to 97%.

2 cl, 2 tbl, 5 ex

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RU 2 390 494 C1

Authors

Petrik Viktor Ivanovich

Gryzlov Boris Vjacheslavovich

Dates

2010-05-27Published

2009-02-20Filed